SPU08P06P
detaildesc

SPU08P06P

Infineon Technologies

型号:

SPU08P06P

封装:

PG-TO251-3

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 60V 8.83A TO251-3

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 300mOhm @ 6.2A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PG-TO251-3
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 42W (Tc)
Series SIPMOS®
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 8.83A (Ta)
Package Tube
Base Product Number SPU08P