BSO303SP
detaildesc

BSO303SP

Infineon Technologies

型号:

BSO303SP

封装:

PG-DSO-8-1

批次:

-

数据手册:

-

描述:

P-CHANNEL POWER MOSFET

购买数量:

递送:

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付款:

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库存 : 3363

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 693

    $0.4085

    $283.0905

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2330 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 21mOhm @ 9.1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 100µA
Supplier Device Package PG-DSO-8-1
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.56W (Ta)
Series OptiMOS® -P
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk