BSD214SNL6327
detaildesc

BSD214SNL6327

Infineon Technologies

型号:

BSD214SNL6327

封装:

PG-SOT363-6-6

批次:

-

数据手册:

-

描述:

SMALL SIGNAL N-CHANNEL MOSFET

购买数量:

递送:

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付款:

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库存 : 41600

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 5189

    $0.057

    $295.773

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 143 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 140mOhm @ 1.5A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1.2V @ 3.7µA
Supplier Device Package PG-SOT363-6-6
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 500mW (Ta)
Series OptiMOS™2
Package / Case 6-VSSOP, SC-88, SOT-363
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Bulk