BSP129L6906
detaildesc

BSP129L6906

Infineon Technologies

型号:

BSP129L6906

封装:

PG-SOT223-4-21

批次:

-

数据手册:

-

描述:

N-CHANNEL POWER MOSFET

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 16000

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 944

    $0.304

    $286.976

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds 108 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 5.7 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6Ohm @ 350mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 108µA
Supplier Device Package PG-SOT223-4-21
Drain to Source Voltage (Vdss) 240 V
Power Dissipation (Max) 1.8W (Ta)
Series SIPMOS®
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 350mA (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Package Bulk