BSC152N10NSFG
detaildesc

BSC152N10NSFG

Infineon Technologies

型号:

BSC152N10NSFG

封装:

PG-TDSON-8

批次:

-

数据手册:

-

描述:

N-CHANNEL POWER MOSFET

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 17576

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 248

    $1.1495

    $285.076

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 15.2mOhm @ 25A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 72µA
Supplier Device Package PG-TDSON-8
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 114W (Tc)
Series OptiMOS™2
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 63A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk