BSC883N03MSG
detaildesc

BSC883N03MSG

Infineon Technologies

型号:

BSC883N03MSG

封装:

PG-TDSON-8

批次:

-

数据手册:

-

描述:

N-CHANNEL POWER MOSFET

购买数量:

递送:

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付款:

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库存 : 73343

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 799

    $0.361

    $288.439

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.8mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package PG-TDSON-8
Drain to Source Voltage (Vdss) 34 V
Power Dissipation (Max) 2.5W (Ta), 57W (Tc)
Series OptiMOS™3M
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 98A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk