SPD04N60C3
detaildesc

SPD04N60C3

Infineon Technologies

型号:

SPD04N60C3

封装:

PG-TO252-3

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 600V 4.5A TO252-3

购买数量:

递送:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 490 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 950mOhm @ 2.8A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 3.9V @ 200µA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 50W (Tc)
Series CoolMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk
Base Product Number SPD04N