SPB42N03S2L-13
detaildesc

SPB42N03S2L-13

Infineon Technologies

型号:

SPB42N03S2L-13

封装:

PG-TO263-3-2

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 42A TO263-3

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 164

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.5415

    $0.5415

  • 10

    $0.4123

    $4.123

  • 100

    $0.34181

    $34.181

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1130 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 30.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 12.6mOhm @ 21A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 37µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 83W (Tc)
Series OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SPB42N