SPA11N60C3XKSA1
detaildesc

SPA11N60C3XKSA1

Infineon Technologies

型号:

SPA11N60C3XKSA1

封装:

PG-TO220-3-31

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 600V 11A TO220-3

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 请查询

请发送RFQ,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 380mOhm @ 7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.9V @ 500µA
Supplier Device Package PG-TO220-3-31
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 33W (Tc)
Series CoolMOS™
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number SPA11N60