IRLIB4343
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IRLIB4343

Infineon Technologies

型号:

IRLIB4343

封装:

TO-220AB Full-Pak

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 55V 19A TO220AB FP

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -40°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 50mOhm @ 4.7A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package TO-220AB Full-Pak
Drain to Source Voltage (Vdss) 55 V
Power Dissipation (Max) 39W (Tc)
Series HEXFET®
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube