IRF7807APBF
detaildesc

IRF7807APBF

Infineon Technologies

型号:

IRF7807APBF

封装:

8-SO

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 8.3A 8SO

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 4.5V
Product Status Obsolete
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package 8-SO
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.5W (Ta)
Series HEXFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 8.3A (Ta)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Package Tube