IRF6708S2TR1PBF
Infineon Technologies
型号:
IRF6708S2TR1PBF
封装:
DirectFET™ Isometric S1
批次:
-
数据手册:
描述:
MOSFET N-CH 30V 13A DIRECTFET S1
购买数量:
递送:
付款:
库存 : 请查询
请发送RFQ，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF @ 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 8.9mOhm @ 13A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | DirectFET™ Isometric S1 |
| Drain to Source Voltage (Vdss) | 30 V |
| Power Dissipation (Max) | 2.5W (Ta), 20W (Tc) |
| Series | HEXFET® |
| Package / Case | DirectFET™ Isometric S1 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Infineon Technologies |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
