IRF6706S2TR1PBF
detaildesc

IRF6706S2TR1PBF

Infineon Technologies

型号:

IRF6706S2TR1PBF

封装:

DirectFET™ Isometric S1

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 25V 17A DIRECTFET

购买数量:

递送:

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付款:

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库存 : 838

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.0545

    $1.0545

  • 10

    $0.90535

    $9.0535

  • 100

    $0.76627

    $76.627

  • 500

    $0.747251

    $373.6255

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1810 pF @ 13 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.8mOhm @ 17A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.35V @ 25µA
Supplier Device Package DirectFET™ Isometric S1
Drain to Source Voltage (Vdss) 25 V
Power Dissipation (Max) 1.8W (Ta), 26W (Tc)
Series HEXFET®
Package / Case DirectFET™ Isometric S1
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 17A (Ta), 63A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)