
Infineon Technologies
型号:
IRF6644
封装:
DIRECTFET™ MN
批次:
-
描述:
MOSFET N-CH 100V 10.3A DIRECTFET
购买数量:
递送:

付款:
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| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10.3A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4.8V @ 150µA |
| Supplier Device Package | DIRECTFET™ MN |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Series | HEXFET® |
| Package / Case | DirectFET™ Isometric MN |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Infineon Technologies |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Ta), 60A (Tc) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |