IRF6621TRPBF
detaildesc

IRF6621TRPBF

Infineon Technologies

型号:

IRF6621TRPBF

封装:

DIRECTFET™ SQ

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 12A DIRECTFET

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1460 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 17.5 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 9.1mOhm @ 12A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.25V @ 250µA
Supplier Device Package DIRECTFET™ SQ
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Series HEXFET®
Package / Case DirectFET™ Isometric SQ
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 55A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)