IRF6619TR1PBF
detaildesc

IRF6619TR1PBF

Infineon Technologies

型号:

IRF6619TR1PBF

封装:

DIRECTFET™ MX

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 20V 30A DIRECTFET

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 2000

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $2.793

    $2.793

  • 10

    $2.3484

    $23.484

  • 100

    $1.89981

    $189.981

  • 500

    $1.68872

    $844.36

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5040 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.2mOhm @ 30A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.45V @ 250µA
Supplier Device Package DIRECTFET™ MX
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Series HEXFET®
Package / Case DirectFET™ Isometric MX
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 150A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)