IRF6619TR1
detaildesc

IRF6619TR1

Infineon Technologies

型号:

IRF6619TR1

封装:

DIRECTFET™ MX

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 20V 30A DIRECTFET

购买数量:

递送:

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付款:

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库存 : 7158

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.767

    $1.767

  • 10

    $1.50955

    $15.0955

  • 100

    $1.277085

    $127.7085

  • 500

    $1.245431

    $622.7155

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5040 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.2mOhm @ 30A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.45V @ 250µA
Supplier Device Package DIRECTFET™ MX
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Series HEXFET®
Package / Case DirectFET™ Isometric MX
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 150A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)