IRF6607TR1
Infineon Technologies
型号:
IRF6607TR1
封装:
DIRECTFET™ MT
批次:
-
数据手册:
描述:
MOSFET N-CH 30V 27A DIRECTFET
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 6930 pF @ 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 25A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drain to Source Voltage (Vdss) | 30 V |
| Power Dissipation (Max) | 3.6W (Ta), 42W (Tc) |
| Series | HEXFET® |
| Package / Case | DirectFET™ Isometric MT |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Infineon Technologies |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 94A (Tc) |
| Vgs (Max) | ±12V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Package | Tape & Reel (TR) |
