IRF3710ZLPBF
detaildesc

IRF3710ZLPBF

Infineon Technologies

型号:

IRF3710ZLPBF

封装:

TO-262

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 100V 59A TO262

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 18mOhm @ 35A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-262
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 160W (Tc)
Series HEXFET®
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 59A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube