IRF3706LPBF
detaildesc

IRF3706LPBF

Infineon Technologies

型号:

IRF3706LPBF

封装:

TO-262

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 20V 77A TO262

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2410 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 4.5 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 8.5mOhm @ 15A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package TO-262
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 88W (Tc)
Series HEXFET®
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 77A (Tc)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Package Tube