IRF3315STRRPBF
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IRF3315STRRPBF

Infineon Technologies

型号:

IRF3315STRRPBF

封装:

D2PAK

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 150V 21A D2PAK

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 82mOhm @ 12A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package D2PAK
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 3.8W (Ta), 94W (Tc)
Series HEXFET®
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)