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IPP120N04S401AKSA1
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IPP120N04S401AKSA1

Infineon Technologies

型号:

IPP120N04S401AKSA1

封装:

PG-TO220-3-1

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 40V 120A TO220-3-1

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 14000 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 176 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 140µA
Supplier Device Package PG-TO220-3-1
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 188W (Tc)
Series OptiMOS™
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPP120N