IPI12CNE8N G
Infineon Technologies
型号:
IPI12CNE8N G
封装:
PG-TO262-3
批次:
-
数据手册:
描述:
MOSFET N-CH 85V 67A TO262-3
购买数量:
递送:
付款:
库存 : 请查询
请发送RFQ，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 40 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 12.6mOhm @ 67A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4V @ 83µA |
| Supplier Device Package | PG-TO262-3 |
| Drain to Source Voltage (Vdss) | 85 V |
| Power Dissipation (Max) | 125W (Tc) |
| Series | OptiMOS™ |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Infineon Technologies |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | IPI12C |
