IPD060N03LGATMA1
detaildesc

IPD060N03LGATMA1

Infineon Technologies

型号:

IPD060N03LGATMA1

封装:

PG-TO252-3

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 50A TO252-3

购买数量:

递送:

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付款:

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库存 : 1642

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.9025

    $0.9025

  • 10

    $0.81035

    $8.1035

  • 100

    $0.63156

    $63.156

  • 500

    $0.521759

    $260.8795

  • 1000

    $0.41191

    $411.91

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 56W (Tc)
Series OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPD060