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IPC80N04S403ATMA1
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IPC80N04S403ATMA1

Infineon Technologies

型号:

IPC80N04S403ATMA1

封装:

PG-TDSON-8-23

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 40V 80A TDSON-8-23

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5720 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.3mOhm @ 40A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 60µA
Supplier Device Package PG-TDSON-8-23
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 100W (Tc)
Series Automotive, AEC-Q101, OptiMOS™
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPC80N