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IPA028N08N3GXKSA1
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IPA028N08N3GXKSA1

Infineon Technologies

型号:

IPA028N08N3GXKSA1

封装:

PG-TO220-FP

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 80V 89A TO220-FP

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 14200 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 206 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 2.8mOhm @ 89A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 3.5V @ 270µA
Supplier Device Package PG-TO220-FP
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 42W (Tc)
Series OptiMOS™
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 89A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tube
Base Product Number IPA028