GT60N321(Q)
Toshiba Semiconductor and Storage
型号:
GT60N321(Q)
封装:
TO-3P(LH)
批次:
-
数据手册:
-
描述:
IGBT 1000V 60A 170W TO3P LH
购买数量:
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付款:
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产品信息
参数信息
用户指南
| Operating Temperature | 150°C (TJ) |
| Test Condition | - |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 2.5 µs |
| Switching Energy | - |
| Current - Collector (Ic) (Max) | 60 A |
| Mounting Type | Through Hole |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Product Status | Obsolete |
| Supplier Device Package | TO-3P(LH) |
| Td (on/off) @ 25°C | 330ns/700ns |
| Current - Collector Pulsed (Icm) | 120 A |
| Series | - |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
| Package / Case | TO-3PL |
| Power - Max | 170 W |
| Mfr | Toshiba Semiconductor and Storage |
| Package | Tube |
| IGBT Type | - |
| Base Product Number | GT60N321 |
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