GT20N135SRA,S1E
Toshiba Semiconductor and Storage
型号:
GT20N135SRA,S1E
封装:
TO-247
批次:
-
数据手册:
-
描述:
D-IGBT TO-247 VCES=1350V IC=40A
购买数量:
递送:
付款:
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产品信息
参数信息
用户指南
| Operating Temperature | 175°C (TJ) |
| Test Condition | 300V, 40A, 39Ohm, 15V |
| Input Type | Standard |
| Switching Energy | -, 700µJ (off) |
| Current - Collector (Ic) (Max) | 40 A |
| Mounting Type | Through Hole |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Product Status | Active |
| Supplier Device Package | TO-247 |
| Td (on/off) @ 25°C | - |
| Current - Collector Pulsed (Icm) | 80 A |
| Series | - |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Gate Charge | 185 nC |
| Package / Case | TO-247-3 |
| Power - Max | 312 W |
| Mfr | Toshiba Semiconductor and Storage |
| Package | Tube |
| IGBT Type | - |
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