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GT30J65MRB,S1E
Toshiba Semiconductor and Storage
型号:
GT30J65MRB,S1E
封装:
TO-3P(N)
批次:
-
数据手册:
-
描述:
650V SILICON N-CHANNEL IGBT, TO-
购买数量:
递送:
付款:
库存 : 61
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$2.4035
$2.4035
10
$1.99785
$19.9785
100
$1.590395
$159.0395
500
$1.345694
$672.847
1000
$1.141805
$1141.805
2000
$1.08472
$2169.44
5000
$1.043936
$5219.68
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产品信息
参数信息
用户指南
| Operating Temperature | 175°C (TJ) |
| Test Condition | 400V, 15A, 56Ohm, 15V |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 200 ns |
| Switching Energy | 1.4mJ (on), 220µJ (off) |
| Current - Collector (Ic) (Max) | 60 A |
| Mounting Type | Through Hole |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Product Status | Active |
| Supplier Device Package | TO-3P(N) |
| Td (on/off) @ 25°C | 75ns/400ns |
| Series | - |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 30A |
| Gate Charge | 70 nC |
| Package / Case | TO-3P-3, SC-65-3 |
| Power - Max | 200 W |
| Mfr | Toshiba Semiconductor and Storage |
| Package | Tube |
| IGBT Type | - |
| Base Product Number | GT30J65 |
