GT30J121(Q)
detaildesc

GT30J121(Q)

Toshiba Semiconductor and Storage

型号:

GT30J121(Q)

封装:

TO-3P(N)

批次:

-

数据手册:

-

描述:

IGBT 600V 30A 170W TO3PN

购买数量:

递送:

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付款:

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库存 : 89

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $3.1065

    $3.1065

  • 10

    $2.78635

    $27.8635

  • 25

    $2.63378

    $65.8445

  • 100

    $2.28266

    $228.266

  • 300

    $2.165592

    $649.6776

  • 500

    $1.943187

    $971.5935

  • 1000

    $1.638826

    $1638.826

  • 2400

    $1.556888

    $3736.5312

  • 4900

    $1.498359

    $7341.9591

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Test Condition 300V, 30A, 24Ohm, 15V
Input Type Standard
Switching Energy 1mJ (on), 800µJ (off)
Current - Collector (Ic) (Max) 30 A
Mounting Type Through Hole
Voltage - Collector Emitter Breakdown (Max) 600 V
Product Status Active
Supplier Device Package TO-3P(N)
Td (on/off) @ 25°C 90ns/300ns
Current - Collector Pulsed (Icm) 60 A
Series -
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 30A
Package / Case TO-3P-3, SC-65-3
Power - Max 170 W
Mfr Toshiba Semiconductor and Storage
Package Tube
IGBT Type -
Base Product Number GT30J121