GT10J312(Q)
Toshiba Semiconductor and Storage
型号:
GT10J312(Q)
封装:
TO-220SM
批次:
-
数据手册:
描述:
IGBT 600V 10A 60W TO220SM
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Operating Temperature | 150°C (TJ) |
| Test Condition | 300V, 10A, 100Ohm, 15V |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 200 ns |
| Switching Energy | - |
| Current - Collector (Ic) (Max) | 10 A |
| Mounting Type | Surface Mount |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Product Status | Obsolete |
| Supplier Device Package | TO-220SM |
| Td (on/off) @ 25°C | 400ns/400ns |
| Current - Collector Pulsed (Icm) | 20 A |
| Series | - |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Power - Max | 60 W |
| Mfr | Toshiba Semiconductor and Storage |
| Package | Tube |
| IGBT Type | - |
| Base Product Number | GT10J312 |
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