G3R350MT12J
GeneSiC Semiconductor
型号:
G3R350MT12J
封装:
TO-263-7
批次:
-
数据手册:
描述:
SIC MOSFET N-CH 11A TO263-7
购买数量:
递送:
付款:
库存 : 5712
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$5.2345
$5.2345
10
$4.6702
$46.702
25
$4.46234
$111.5585
100
$4.1648
$416.48
250
$3.97955
$994.8875
500
$3.844669
$1922.3345
1000
$3.713569
$3713.569
2500
$3.54825
$8870.625
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 334 pF @ 800 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 15 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 4A, 15V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.69V @ 2mA |
| Supplier Device Package | TO-263-7 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 75W (Tc) |
| Series | G3R™ |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Technology | SiCFET (Silicon Carbide) |
| Mfr | GeneSiC Semiconductor |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Vgs (Max) | ±15V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Package | Tube |
| Base Product Number | G3R350 |
