2N7636-GA
GeneSiC Semiconductor
型号:
2N7636-GA
封装:
TO-276
批次:
-
数据手册:
-
描述:
TRANS SJT 650V 4A TO276
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 225°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 324 pF @ 35 V |
| FET Type | - |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 415mOhm @ 4A |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-276 |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 125W (Tc) |
| Series | - |
| Package / Case | TO-276AA |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Mfr | GeneSiC Semiconductor |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) (165°C) |
| Vgs (Max) | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Package | Bulk |
