2N7639-GA
detaildesc

2N7639-GA

GeneSiC Semiconductor

型号:

2N7639-GA

封装:

TO-257

批次:

-

数据手册:

pdf

描述:

TRANS SJT 650V 15A TO257

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 225°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1534 pF @ 35 V
FET Type -
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 105mOhm @ 15A
Product Status Obsolete
Vgs(th) (Max) @ Id -
Supplier Device Package TO-257
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 172W (Tc)
Series -
Package / Case TO-257-3
Technology SiC (Silicon Carbide Junction Transistor)
Mfr GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C 15A (Tc) (155°C)
Vgs (Max) -
Drive Voltage (Max Rds On, Min Rds On) -
Package Bulk