G3R160MT12D
detaildesc

G3R160MT12D

GeneSiC Semiconductor

型号:

G3R160MT12D

封装:

TO-247-3

批次:

-

数据手册:

pdf

描述:

SIC MOSFET N-CH 22A TO247-3

购买数量:

递送:

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库存 : 3530

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $6.194

    $6.194

  • 10

    $5.55465

    $55.5465

  • 25

    $5.31734

    $132.9335

  • 100

    $4.978

    $497.8

  • 250

    $4.766188

    $1191.547

  • 500

    $4.611319

    $2305.6595

  • 1000

    $4.462169

    $4462.169

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 15 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 192mOhm @ 10A, 15V
Product Status Active
Vgs(th) (Max) @ Id 2.69V @ 5mA
Supplier Device Package TO-247-3
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 123W (Tc)
Series G3R™
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Mfr GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Vgs (Max) ±15V
Drive Voltage (Max Rds On, Min Rds On) 15V
Package Tube
Base Product Number G3R160