GA08JT17-247
detaildesc

GA08JT17-247

GeneSiC Semiconductor

型号:

GA08JT17-247

封装:

TO-247AB

批次:

-

数据手册:

pdf

描述:

TRANS SJT 1700V 8A TO247AB

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature 175°C (TJ)
FET Feature -
FET Type -
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 250mOhm @ 8A
Product Status Obsolete
Vgs(th) (Max) @ Id -
Supplier Device Package TO-247AB
Drain to Source Voltage (Vdss) 1700 V
Power Dissipation (Max) 48W (Tc)
Series -
Package / Case TO-247-3
Technology SiC (Silicon Carbide Junction Transistor)
Mfr GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C 8A (Tc) (90°C)
Vgs (Max) -
Drive Voltage (Max Rds On, Min Rds On) -
Package Tube