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BSS670S2LL6327HTSA1
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BSS670S2LL6327HTSA1

Infineon Technologies

型号:

BSS670S2LL6327HTSA1

封装:

PG-SOT23

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 55V 540MA SOT23-3

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 75 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 2.26 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 650mOhm @ 270mA, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 2.7µA
Supplier Device Package PG-SOT23
Drain to Source Voltage (Vdss) 55 V
Power Dissipation (Max) 360mW (Ta)
Series OptiMOS™
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 540mA (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)