BSS139L6327HTSA1
detaildesc

BSS139L6327HTSA1

Infineon Technologies

型号:

BSS139L6327HTSA1

封装:

PG-SOT23

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 250V 100MA SOT23-3

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds 76 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 3.5 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 14Ohm @ 0.1mA, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 1V @ 56µA
Supplier Device Package PG-SOT23
Drain to Source Voltage (Vdss) 250 V
Power Dissipation (Max) 360mW (Ta)
Series SIPMOS®
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Package Tape & Reel (TR)