BSP300 E6327
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BSP300 E6327

Infineon Technologies

型号:

BSP300 E6327

封装:

PG-SOT223-4-21

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 800V 190MA SOT223-4

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 230 pF @ 25 V
FET Type N-Channel
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 20Ohm @ 190mA, 10V
Product Status Discontinued at Digi-Key
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package PG-SOT223-4-21
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 1.8W (Ta)
Series SIPMOS®
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 190mA (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)