BSO200N03S
detaildesc

BSO200N03S

Infineon Technologies

型号:

BSO200N03S

封装:

PG-DSO-8

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 7A 8DSO

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 20mOhm @ 8.8A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 10µA
Supplier Device Package PG-DSO-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1.56W (Ta)
Series OptiMOS™
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)