BSB017N03LX3 G
Infineon Technologies
型号:
BSB017N03LX3 G
封装:
MG-WDSON-2, CanPAK M™
批次:
-
数据手册:
描述:
MOSFET N-CH 30V 32A/147A 2WDSON
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 7800 pF @ 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 30A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drain to Source Voltage (Vdss) | 30 V |
| Power Dissipation (Max) | 2.8W (Ta), 57W (Tc) |
| Series | OptiMOS™ |
| Package / Case | 3-WDSON |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Infineon Technologies |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 147A (Tc) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
