BSB012NE2LX
detaildesc

BSB012NE2LX

Infineon Technologies

型号:

BSB012NE2LX

封装:

MG-WDSON-2, CanPAK M™

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 25V 37A/170A 2WDSON

购买数量:

递送:

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付款:

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产品信息

参数信息

用户指南

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 12 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.2mOhm @ 30A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package MG-WDSON-2, CanPAK M™
Drain to Source Voltage (Vdss) 25 V
Power Dissipation (Max) 2.8W (Ta), 57W (Tc)
Series OptiMOS™
Package / Case 3-WDSON
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 37A (Ta), 170A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)