MSCSM120AM31TBL1NG
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MSCSM120AM31TBL1NG

Microchip Technology

型号:

MSCSM120AM31TBL1NG

封装:

-

批次:

-

数据手册:

pdf

描述:

PM-MOSFET-SIC-BL1

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Configuration 2 N Channel (Phase Leg)
Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs 232nC @ 20V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 31mOhm @ 40A, 20V
Product Status Active
Vgs(th) (Max) @ Id 2.8V @ 3mA
Supplier Device Package -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Series -
Package / Case Module
Technology Silicon Carbide (SiC)
Power - Max 310W
Mfr Microchip Technology
Current - Continuous Drain (Id) @ 25°C 79A
Package Bulk
Base Product Number MSCSM120