APTM60A11FT1G
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APTM60A11FT1G

Microchip Technology

型号:

APTM60A11FT1G

封装:

SP1

批次:

-

数据手册:

pdf

描述:

MOSFET 2N-CH 600V 40A SP1

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds 10552pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 132mOhm @ 33A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 2.5mA
Supplier Device Package SP1
Drain to Source Voltage (Vdss) 600V
Series -
Package / Case SP1
Technology MOSFET (Metal Oxide)
Power - Max 390W
Mfr Microchip Technology
Current - Continuous Drain (Id) @ 25°C 40A
Package Bulk
Base Product Number APTM60