APTM10HM19FT3G
detaildesc

APTM10HM19FT3G

Microchip Technology

型号:

APTM10HM19FT3G

封装:

SP3

批次:

-

数据手册:

-

描述:

MOSFET 4N-CH 100V 70A SP3

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Configuration 4 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 21mOhm @ 35A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package SP3
Drain to Source Voltage (Vdss) 100V
Series -
Package / Case SP3
Technology MOSFET (Metal Oxide)
Power - Max 208W
Mfr Microchip Technology
Current - Continuous Drain (Id) @ 25°C 70A
Package Bulk
Base Product Number APTM10