TPCC8009,LQ(O
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TPCC8009,LQ(O

Toshiba Semiconductor and Storage

型号:

TPCC8009,LQ(O

封装:

8-TSON Advance (3.1x3.1)

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 24A 8TSON

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1270 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7mOhm @ 12A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 3V @ 200µA
Supplier Device Package 8-TSON Advance (3.1x3.1)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) -
Series U-MOSIV
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 24A (Ta)
Package Tape & Reel (TR)
Base Product Number TPCC8009