2SK3566(STA4,Q,M)

Toshiba Semiconductor and Storage

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2SK3566(STA4,Q,M)

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Package:

TO-220SIS

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Description:

MOSFET N-CH 900V 2.5A TO220SIS

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	470 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	6.4Ohm @ 1.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-220SIS
Drain to Source Voltage (Vdss)	900 V
Power Dissipation (Max)	40W (Tc)
Series	π-MOSIV
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	2SK3566