TPC8109(TE12L)
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TPC8109(TE12L)

Toshiba Semiconductor and Storage

型号:

TPC8109(TE12L)

封装:

8-SOP (5.5x6.0)

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 30V 10A 8-SOP

购买数量:

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产品信息

参数信息

用户指南

FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2260 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 20mOhm @ 5A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 1mA
Supplier Device Package 8-SOP (5.5x6.0)
Drain to Source Voltage (Vdss) 30 V
Series -
Package / Case 8-SOIC (0.173", 4.40mm Width)
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Package Cut Tape (CT)
Base Product Number TPC8109