TP65H150G4LSG
Transphorm
型号:
TP65H150G4LSG
品牌:
封装:
2-PQFN (8x8)
批次:
-
数据手册:
-
描述:
GAN FET N-CH 650V PQFN
购买数量:
递送:
付款:
库存 : 2981
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$4.807
$4.807
10
$4.31395
$43.1395
100
$3.53457
$353.457
500
$3.008916
$1504.458
1000
$2.53764
$2537.64
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 598 pF @ 400 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 8.5A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.8V @ 500µA |
| Supplier Device Package | 2-PQFN (8x8) |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 52W (Tc) |
| Series | - |
| Package / Case | 2-PowerTSFN |
| Technology | GaNFET (Gallium Nitride) |
| Mfr | Transphorm |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Cut Tape (CT) |
| Base Product Number | TP65H150 |
.jpg)
.jpg)
