TP65H300G4LSG-TR
detaildesc

TP65H300G4LSG-TR

Transphorm

型号:

TP65H300G4LSG-TR

品牌:

Transphorm

封装:

3-PQFN (8x8)

批次:

-

数据手册:

pdf

描述:

GANFET N-CH 650V 6.5A 3PQFN

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 6707

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $4.351

    $4.351

  • 10

    $3.65085

    $36.5085

  • 100

    $2.95336

    $295.336

  • 500

    $2.625192

    $1312.596

  • 1000

    $2.247824

    $2247.824

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 9.6 nC @ 8 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 312mOhm @ 5A, 8V
Product Status Active
Vgs(th) (Max) @ Id 2.6V @ 500µA
Supplier Device Package 3-PQFN (8x8)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 21W (Tc)
Series -
Package / Case 3-PowerDFN
Technology GaNFET (Gallium Nitride)
Mfr Transphorm
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
Vgs (Max) ±18V
Drive Voltage (Max Rds On, Min Rds On) 8V
Package Cut Tape (CT)
Base Product Number TP65H300